EBS (Electron Beam Semiconductor) Pulse Amplifier Life Test.

Abstract

Highly stable, high voltage, beam shield passivated diodes were fabricated for use in EBS (electron beam semiconductor) grid controlled pulse amplifiers. Six EBS pulse amplifiers were fabricated using these diodes and four of the EBS amplifiers were operated on life test for a total socket time of 14,500 hours. Data is presented showing that stable diode operation was obtained. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 28, 1974
Accession Number
AD0779908

Entities

Organizations

  • Watkins-Johnson Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Electron Beams
  • Electronics
  • Electrons
  • High Voltage
  • Life Tests
  • Pulse Amplifiers
  • Semiconductors
  • Solid State Electronics
  • Voltage

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics