Radiation Effects of MOS Gate Insulators.

Abstract

Impurity metal ions (sodium, aluminum, chromium, and gold) were diffused (and grown) into oxide films on silicon which were then exposed to 1,000,000 rads of ionizing radiation from a cobalt-60 source. The effects of radiation were observed by chemical analysis (to determine ion transport) and by conductance and capacitance measurements (to determine oxide charge and distribution of surface state density). (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1974
Accession Number
AD0780186

Entities

People

  • Frederick M. Fowkes
  • Sidney R. Butler
  • Walter E. Kahlke

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Aluminum
  • Capacitance
  • Chemical Analysis
  • Chromium
  • Dielectrics
  • Electromagnetic Radiation
  • Films
  • Impurities
  • Ionizing Radiation
  • Measurement
  • Metals
  • Oxide Films
  • Oxides
  • Radiation
  • Radiation Effects

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene