Electron Beam Induced Degradation in EBS Diodes.

Abstract

The report describes the effects of ionizing radiation on oxide-semiconductor structures and, in particular, the effects of electron beams on the characteristics of EBS devices. Several methods of protecting the EBS diodes from the effects of the high energy electron beam are proposed and discussed. Brief mention is made of some experiments which have been performed. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 20, 1974
Accession Number
AD0780521

Entities

People

  • William E. Krag

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Beta Particles
  • Compound Semiconductors
  • Corpuscular Radiation
  • Degradation
  • Electromagnetic Radiation
  • Electron Beams
  • Electronics
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Energy
  • High Energy
  • Ionizing Radiation
  • Nuclear Radiation
  • Radiation
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics