Susceptibility of UHF RF Transistors to High Power UHF Signals.
Abstract
The report describes a program that was initiated to determine what effects high power UHF/microwave signals have upon solid state components such as transistors used in RF amplifier stages of UHF/microwave receivers. The effects of CW power at 200 MHz upon the following transistor parameters were monitored: (1) small signal power gain; (2) noise figure; (3) breakdown voltages; (4) leakage currents; (5) Beta (hFE). The one parameter that did degrade significantly when CW UHF power was applied was the dc current gain Beta. A change in Beta from an initial value of 60 to a value of 15 after exposure is a representative case. These changes in Beta occur at incident power levels significantly below that required to cause component failure. The parameter Beta is a good parameter to monitor during CW EMV investigations. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1974
- Accession Number
- AD0780536
Entities
People
- Hollis J. Hewitt
- James J. Whalen
Organizations
- University at Buffalo