Charge-Coupled Scanned IR Imaging Sensors
Abstract
A program is in progress directed toward showing the feasibility of infrared sensitive charge-coupled imagers by constructing imaging arrays. The detectors are of both the Schottky-barrier type and the photoconductive type. The first device objective is a 64 x 1 array of palladium silicide on p-silicon Schottky-barrier diodes that couple into a three-phase CCD shift-register. Sensitivity is expected in the 2- to 3-micrometer region. Barriers produced with other metals can detect radiation in the 3- to 5-micrometer window useful for thermal imaging. New ideas are incorporated into the design so that the CCD does not have to handle the background signal even if frame comparison should be necessary. Test Schottky barriers have been made to permit measurement of sensitivity and dark current. Custom-designed circuitry has been built to provide the complex pulse waveforms required for the 64 x 1 array.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 1974
- Accession Number
- AD0780546
Entities
People
- Elliott S. Kohn
- Melvin L. Schultz
Organizations
- Sarnoff Corporation