Investigation of Possibilities for Improvement in Stability of Photoelectric characteristics of Irradiated Silicon P-N Junctions,
Abstract
Methods are considered for increasing the stability of photoconverters operating in the conditions of hard radiation action. One of the methods in question is thermal annealing of the irradiated devices. A change is considered in the process of annealing of the spectral distribution of photosensitivity and the diffusion length of the minority carriers in the base of irradiated n-p type photoconverters. Another possibility for assuring radiation resistance is doping them with lithium. The results are presented of irradiation and low-temperature annealing of p-a type photoconverters with an impurity of lithium and various concentrations of oxygen. In the case when the content of oxygen in silicon is small ( < 10 to the 17th power/cc) devices with an impurity of lithium reveal an extremely high resistance to irradiation. The ability of lithium to neutralize recombination centers in silicon having a nonradiation origin is also shown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 10, 1973
- Accession Number
- AD0780999
Entities
People
- G. M. Grigoreva
Organizations
- United States Army Foreign Science and Technology Center