Integrated Optical Circuits

Abstract

In(x)Ga(1-x)As avalanche photodiodes have been integrated into GaAs waveguide structures by selective epitaxial deposition. Measurements of the ionization coefficients of electrons (alpha) and holes (beta) have been made for GaAs by using a special type of GaAs Schottky barrier avalanche photodiode structure. A new type of GaAs avalanche photodiode which has considerable advantages for detection at wavelengths up to 0.93 micrometer has been investigated. Significant progress has been made in the vapor epitaxial growth of Hg(1-x)Cd(x)Te on CdTe substrates by H2 transport. High-energy proton bombardment has been used to fabricate waveguides for 10.6 micrometer in CdTe. Coupling of 10.6 micrometer radiation into CdTe waveguides has been explored. The feasibility of integrated surface acoustic wave modulators for 10.6 micrometer has been investigated.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1973
Accession Number
AD0781102

Entities

People

  • Charles M. Wolfe
  • David L. Spears
  • Gregory E. Stillman
  • Ivars Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acoustic Waves
  • Attenuation
  • Avalanche Photodiodes
  • Detection
  • Detectors
  • Frequency Shift
  • Geometry
  • Laser Beams
  • Materials
  • Measurement
  • Optical Circuits
  • Optical Waveguides
  • Photonic Integrated Circuits
  • Quantum Efficiency
  • Refractive Index
  • Surface Acoustic Waves
  • Surface Waves

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics