Influence of Built-In Field Heterogeneity on Semiconductor Pickup Efficiency,
Abstract
The optimal curvature of the potential of the built-in field of a planar photocell with p-type doped layer n-type base and its effect on the efficiency of doped layer pickup are examined. The photocell is illuminated on the doped layer side. The pickup efficiency maximum was found to depend on the surface recombination rate. In some field configurations the photocell is less sensitive to the rate of surface recombination. The gain in pickup of carriers generated with shortwave radiation, for a particular field configuration, is approximately 50%. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 1974
- Accession Number
- AD0781155
Entities
People
- A. F. Milovanov
- V. M. Evdokimov
Organizations
- United States Army Foreign Science and Technology Center