Solid State Materials and Devices
Abstract
;Contents: Transistor circuit models; Questionability of drift- diffusion transport in the analysis of small semiconductor devices; The effect of neutron radiation on noise in field-effect transistors; A new high sensitivity integrated silicon Schottky-barrier phototransistor; Analyses of transient capacitance experiments for Au-GaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layer; An evaluation of carrier domain devices for functional integrated circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1973
- Accession Number
- AD0781165
Entities
People
- Arthur J. Brodersen
- Eugene R. Chenette
- Fredrik A. Lindholm
- Shengsan Li
Organizations
- University of Florida