Ion Implantation in Semi-Conductors and Semi-Insulators.

Abstract

Ion implantation of II-VI semiconductors offers numerous possibilities for the fabrication of electronic devices. Several possibilities have been explored and are reported here. The electrical and optical properties of ion-implanted ZnSe and ZnS are reported and their suitability as surface contact injection devices, p-n junctions and light emitting diodes is discussed. The suitability of these materials for switching and memory devices is also discussed. The results of ion implantation are compared with the behavior of doped samples. The methods of material preparation are carefully considered and related to the experimental data. An experiment to measure the laser-induced absorption of II-VI compounds is discussed. Most of this discussion concerns the setup of the experiment and a mathematical analysis of the response times anticipated. The thermoluminescence of Br-implanted ZnS is compared with the behavior of Br-doped and pure samples of ZnS. Several methods for determining the regularity and depth of the implanted layers are described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1974
Accession Number
AD0781193

Entities

People

  • Bok Kyoon Shin
  • Darrel L. Bartelheimer
  • Elward T. Rodine

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Dielectrics
  • Experimental Data
  • Extrinsic Semiconductors
  • Implantation
  • Ion Implantation
  • Ions
  • Light Emitting Diodes
  • Materials
  • Mathematical Analysis
  • Memory Devices
  • Optical Properties
  • P-N Junctions
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics