Growth and Investigation of Hexagonal Boron Nitride.
Abstract
BN films have been chemically vapor deposited on various substrates. Ordered polycrystalline films are obtained on the (5,-6,1) Si substrate. A transit-charge-technique apparatus for the direct measurement of the carrier-drift velocity has been constructed and tested with drift-velocity measurements in Si. As yet, drift-velocity measurements on the BN films have not been successful. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1974
- Accession Number
- AD0781292
Entities
People
- T. O. Yep