The Physics of Interface Interactions Related to Reliability of Future Electronic Devices

Abstract

Contents: The reliability of semiconductor-insulator interfaces- (Impact ionization model for dielectric instability breakdown; Phosphorus precipitation on Si/SiO2 interfaces); Band structure and switching in insulators--(Optical properties of allotropic forms of SiO2; Structural transformations as observed by TEM during electrical switching in amorphous Ge- Te); Instabilities associated with metal-glass Interactions--(Analysis of thin film structures with nuclear backscattering and X-ray diffraction; Reactions of thin metal films with Si or SiO2 substrates).

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1973
Accession Number
AD0781820

Entities

People

  • King-ning Tu
  • Thomas R. Distefano

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Band Structures
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Energy
  • Electron Microscopy
  • Ionizing Radiation
  • Material Degradation Processes
  • Optical Properties
  • Oxides
  • Scattering
  • Semiconductors
  • Transition Metals
  • Transition Temperature
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene