High Density Memory.

Abstract

A study was made of programmable non-volatile metal nitride oxide silicon (MNOS) memory. The work included: Setting up of MNOS processing; evaluation and characterization of MNOS devices; design of memory integrated circuits; and, fabrication of memory integrated circuits.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1973
Accession Number
AD0781919

Entities

People

  • A. S. Chawla
  • H. C. Lin

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Fabrication
  • Group 12 Elements
  • High Density
  • Integrated Circuits
  • Test And Evaluation

Fields of Study

  • Engineering

Readers

  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Thin Film Deposition Science.