Study of the Electronic Surface State of III - V Compounds

Abstract

The overall aim of this work is to provide basic knowledge of surfaces and interfaces necessary for the development of practical photocathodes in the 1-2 micrometer range. One phase of the program has started with developing understanding of the surface states on the clean III-V materials. A model for the surface states of the clean GaAs (110) face based on experimental and theoretical work was developed. Additional results of Cs on the clean (110) GaAs face are given, as well as brief histories of each GaAs cleavage experiment. The final sections outline work on GaSb and Cesium Oxides.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1974
Accession Number
AD0782058

Entities

People

  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Emission
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Filled Bands
  • Materials
  • Measurement
  • Photoelectric Emission
  • Surface Roughness
  • Universities
  • Valence Bands
  • Visible Spectra

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science (Mechanical Engineering).
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics