Solid State X-Band Driver.
Abstract
Four exploratory developmental x-band avalanche diode amplifiers were constructed. The amplifier delivers 5 Watts output power with 10 to 15 dB of gain across the frequency range of 7.9 to 8.4 GHz. The RF swept gain versus frequency data for all four units is included. The maximum amplifier efficiency observed is 7%. The phase linearity curve was measured for one unit and the data is included. The method of approach as well as the design and fabrication procedures are described. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 19, 1973
- Accession Number
- AD0782254
Entities
People
- W. C. Tsai
Organizations
- RTX