Long Term Memory in Junction Devices Using Multivalent Trapping Impurities in Silicon.
Abstract
The purpose of the project is to study the effect of multivalent trapping on long term memory in junction devices. In the course of the field induced trapping (F.I.T.) nonvolatile switching investigations, three new types of behavior have been observed: Irreversible switching in n-Si epitaxial structures doped with Cu, apparently due to a conductive filament formation; reversible switching of a character different than normally observed in F.I.T. devices; and, large magnitude oscillations (KHz) in Schottky diodes under large forward bias (35 volts). Further, a new electronic instrument, an automated pulse potentiometer, has been designed constructed and tested under high voltage conditions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1974
- Accession Number
- AD0782255
Entities
People
- J. W. Holm-kennedy
Organizations
- University of California, Los Angeles