Transient Surface Damage.
Abstract
The report describes the results of a study of transient surface damage phenomena in contemporary MOS and CMOS devices following pulsed radiation exposure. Measurements made on individual N- and P-channel transistor structures between 0.0001 sec and 1000 sec after irradiation show that there are widespread variations in radiation sensitivity and space charge annealing behavior among samples prepared by different processes and by different manufacturers. Response data for devices fabricated on bulk silicon and silicon-on-sapphire (SOS) substrates and for various SiO2 and Al2O3 gate insulators are compared and discussed. The effects of radiation-induced charge in the sapphire substrate of an SOS device are explored. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1974
- Accession Number
- AD0782285
Entities
People
- Mayrant Simons
Organizations
- RTI International