Electrical and Optical Studies of Deep Impurities in Semiconductors.

Abstract

;Contents: Ionization energy, impurity conduction and magnetoresistance in GaAs doped with Mn; Photo-ionization of Mn acceptors in GaAs; Deduction of impurity state functions from photo-ionization properties; Free hole scattering by 'deep' neutral acceptors; Hole capture cross-section of Hg(-) acceptors in Ge; Magnetophonon effect.

Document Details

Document Type
Technical Report
Publication Date
May 01, 1974
Accession Number
AD0782309

Entities

People

  • John S. Blakemore

Organizations

  • Florida Atlantic University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Ionization
  • Magnetoresistance
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics