Determination of the Sign of Carrier Transported across SiO2 Films on Si
Abstract
A technique has been developed for determination of the sign of charge carrier transported across an insulating film on a semiconductor substrate, using the charge carrier separation properties of a shallow p-n junction diffused into the semiconductor. For thermally grown SiO2, unmetallized and contacted by a corona discharge in dry air, electrons are found to carry the current for both polarities of surface potential. Also demonstrated is electron- hole pair production in the Si by electrons entering from the oxide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1974
- Accession Number
- AD0782471
Entities
People
- Murray A. Lampert
- Walter C. Johnson
- Zeev A. Weinberg
Organizations
- Princeton University