Ion Bombardment and Optical Studies of Lead Azide.
Abstract
Thin films of pure lead azide one, two and four layers thick were prepared. A Tl doped four layer film was also prepared. These films were analyzed by the method of Rutherford Backscattering using 1 mev protons. Single layer thin lead azide films were analyzed by the technique of Auger Electron Spectroscopy. It is felt that both these methods of analysis may be feasible for investigating the composition of lead azide thin films. Construction of a mass spectrometer for SIMS and ISS measurements on solid surfaces was completed. A technique has been developed to measure the optical thickness nt of a parallel-sided flat-faced thin slab of transparent material such as a plate of lead azide, or mica, or a cover glass. If the plate's thickness t is known (by micrometer, or weighing), then its index of refraction is determined. The sample is placed in one arm of a Michelson Interferometer, and using a white-light source, colored fringes are produced first bypassing the sample, then through it. Measurement of the mirror displacement needed for this gives the sample's optical thickness. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 16, 1974
- Accession Number
- AD0782884
Entities
People
- Charles B. Cooper
- John H. Miller Iii
Organizations
- University of Delaware