Bipolar Medium-Scale Integrated Circuit Hardening. Volume I. Phase I.

Abstract

The results of the shallow device fabrication indicate that low-power Schottky circuitry can be fabricated with full fan-out up to 10 to the 15th power neutron/sq cm. Three profiles have been identified that use an arsenic emitter and a shallow base junction. Ion implantation is used to a high degree. A multilevel metal system with compatible SiCr thin-film resistors has been demonstrated. The improved dielectric effort did not result in a feasible process for this program, but it did demonstrate several fabrication processes that can lead to an improved dielectric process. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1974
Accession Number
AD0783360

Entities

People

  • Carl Robbins
  • Dale Devries
  • Joe Hoffman
  • Ken Bean
  • R. A. Stehlin

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Circuits
  • Electronic Components
  • Electronic Equipment
  • Fabrication
  • Film Resistors
  • Films
  • Fixed Resistors
  • Hardening
  • Implantation
  • Integrated Circuits
  • Ion Implantation
  • Ions
  • Resistors
  • Thin Film Resistors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology