Hardened Hybrid Semiconductor Packages.
Abstract
The work was performed to develop a radiation hardened packaging technique for connecting integrated circuit chips. The interconnecting metal was chosen to be vapor deposited aluminum. The two layer substrate upon which the chips were mounted had beam leads integral with the metallization on the substrate. The two aluminum layers and the aluminum oxide dielectric layer were deposited in sequence through masks in a single vacuum chamber pumpdown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1974
- Accession Number
- AD0783432
Entities
People
- Frank A. Lindberg