Electron Beam Semiconductor High Current Video Pulser.
Abstract
Ten EBS high current pulse amplifiers were fabricated, tested, and delivered to ECOM for life testing. The diodes used in these devices had an active area of 0.35 sq cm and were fabricated with an integral gold beam shield over the junction boundry to prevent diode reverse breakdown degradation due to beam illumination. The diodes were mounted on BeO substrates in order to be able to x-ray and evaluate the diode to substrate bond. Each of the devices was tested at approximately 40 A peak output into a 1 ohm load with a pulse risetime of 3 nanoseconds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1974
- Accession Number
- AD0783435
Entities
People
- Bruce W. Bell
- Richard I. Knight
Organizations
- Watkins-Johnson Company