Investigation of Chromium-Doped Oxides.

Abstract

Part I of the report describes results obtained during the investigation of the mechanisms by which chromium-doping of a silicon-dioxide gate insulator may improve the radiation resistance of MOS devices. Part II details the fabrication and testing of a CMOS/SOS 4-bit adder that employed chrome-doped and aluminum ion-implanted gate oxides to provide improved radiation hardness.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1973
Accession Number
AD0783988

Entities

People

  • Raymond A. Kjar

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Chromium
  • Dielectrics
  • Dioxides
  • Elements
  • Fabrication
  • Hardness
  • Material Forming Processes
  • Materials Processing
  • Oxides
  • Radiation
  • Radiation Resistance
  • Resistance
  • Silicon
  • Silicon Dioxide

Fields of Study

  • Physics

Readers

  • Business Analytics
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene