III-V Surface Studies.
Abstract
The authors have studied the structural and chemical state of the GaAs surface and have been able to characterize this surface at various stages during activation to a state of Negative Electron Affinity which is produced by the adsorption of cesium and oxygen. The LEED-Auger properties, the cesium and oxygen interactions, and the photoemissive characteristics have been studied as a function of temperature from -170 to 600C. An atomic model for the NEA GaAs/Cs/O surface is discussed. Studies have begun of the Ga/In/As ternary system in order to extend the photoemissive response into the 1- to 2-micrometer region. Plans have been developed for the systematic study of compound semiconductor surface structures in terms of differences in atomic radii and electronegativity between the constituent III-V atoms. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1974
- Accession Number
- AD0784206
Entities
People
- Bernard Goldstein
Organizations
- RCA Corporation