Molecular Beam Epitaxy of 2-6 Compound Waveguides
Abstract
Monocrystalline films of ZnSe and ZnTe have been grown by molecular beam epitaxy on GaAs(110) and (100) at 300 to 350C. ZnTe(100) films are as smooth as the chemically-polished substrate (smooth to tens of Angstroms), while the others are considerably rougher. Films grown on BaF2(100) are polycrystalline. ZnTe/Zn(SeTe)/GaAs(100) is proposed for an optical waveguide system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 22, 1974
- Accession Number
- AD0784650
Entities
People
- Donald L. Smith