Electron Beam Semiconductor S-Band Amplifier.
Abstract
During the period, six diodes were placed on life test and successfully passed the required 1000 hours of operation with stable reverse breakdown voltage characteristics. Two operating S-band tubes were built and tested at 3 GHz. These tubes used pencil electron beams, mailbox helix deflection structures, and targets composed of diodes working into radial line resonators. Peak power output of 20.4 watts was achieved at a duty factor of 0.001. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1974
- Accession Number
- AD0784666
Entities
People
- L. A. Roberts
Organizations
- Watkins-Johnson Company