Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide,

Abstract

Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1974
Accession Number
AD0784877

Entities

People

  • Richard D. Pashley

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Charged Particles
  • Electrical Properties
  • Elements
  • Energy Levels
  • Fabrication
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Implantation
  • Ion Implantation
  • Ions
  • Metals

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics