Polarization Dependence of the Free Carrier Reflectivity of Heavily Doped Semiconductors,
Abstract
Classical Drude theory is used to calculate the optical reflectivity and transmissivity for various polarizations, relaxation times, and angles of incidence for a representative extrinsic semiconductor (n-doped InSb) near its free carrier plasma wavelength lambda sub p. Thus far, most infrared measurements on heavily doped semiconductors have been reported for normal incidence. By a propert choice of dopant concentration, lambda sub p can be tailored to lie within the atmospheric infrared transmission region between 8 and 14 micrometers. Suitably n-doped semiconductors, such as InSb, Ge, and Si, should exhibit the polarization features described above and thus offer potential application as low intensity optical components, such as reflection polarizers and cut-off filters, for optical/laser systems operating in this spectral region. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0785538
Entities
People
- Leonard Muldawer
- Robert J. Esposito
Organizations
- Frankford Arsenal