Annealing Studies of Al(+) Implanted SiO2 Thin Films.
Abstract
The trapping of charge in the amorphous SiO2 layer of metal-oxide-semiconducting devices under ionizing radiation conditions can be modified by implanting the oxide with Al(+) ions. Optical absorption, E.S.R. and MOS capacitance methods have been used to study implantation induced defects in the oxide, the associated change in oxide charge storage and the stability of the defects to post implantation thermal annealing. A simple model of negative charge storage in the implantation zone combined with positive charge storage in the interface regions has been examined. Results of this modeling are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1974
- Accession Number
- AD0785856
Entities
People
- B. S. H. Royce
- Shuo Wang
- Teresa L. Russell
Organizations
- Princeton University