Equivalent Circuit Parameters of Microwave Power Transistors at High Injection Levels,
Abstract
Circuit parameters are derived for a high-frequency planar drift power transistor. In determining low-signal parameters, the inductances of transistor base, emitter, and collector and the parasitic reactive elements of the measuring circuits are critical.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 16, 1974
- Accession Number
- AD0786038
Entities
People
- E. P. Sorokin
- I. P. Nikolaevskii
- V. V. Polevoi
Organizations
- United States Army Foreign Science and Technology Center