Analysis of Semiconductor Structures by Nuclear and Electrical Techniques: Silicide Formation.

Abstract

The reactions between metal layers and Si or SiO2 substrates are major considerations in choice of metallization systems for integrated circuits. Since these reactions can occur at temperatures as low as 100C, it is necessary to make the proper choice of metal layers to obtain satisfactory metal/Si contacts compatible with processing technology. In the past year (May 73 to May 74) the work at Caltech has concentrated on evaluation of silicide formation. Primary emphasis was placed on Pd, Ni and V. For some metals (Nb, V, Ti) the metal layers were deposited on SiO2 as well as Si. In this work metal layers 1000 to 4000A thick are deposited and silicide growth kinetics determined by MeV He backscattering spectrometry and phase identification by glancing angle x-ray diffraction. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1974
Accession Number
AD0786459

Entities

People

  • Herbert Krautle
  • James W. Mayer
  • Marc-a. Nicolet
  • Robert W. Bower
  • Wei-kan Chu

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Backscattering
  • Circuits
  • Compound Semiconductors
  • Diffraction
  • Electronics
  • Identification
  • Integrated Circuits
  • Kinetics
  • Metal Oxide Semiconductors
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Spectrometry
  • Substrates
  • X Rays
  • X-Ray Diffraction

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene