Silicon Nitride: A Promising Material for Radome Applications.

Abstract

Dielectric properties of various reaction-sintered and hot-pressed silicon nitride specimens were measured at 10 GHz at room temperature, 1000F and 2000F. Dielectric constant values ranged from 5.5 to 9.3, and loss tangent values from 0.001 to 0.16. The major detrimental impurity was identified as residual unreacted silicon. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1974
Accession Number
AD0787255

Entities

People

  • Donald R. Messier
  • Philip Wong

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Dielectric Permittivity
  • Dielectric Properties
  • Dielectrics
  • Impurities
  • Materials

Readers

  • Microwave Engineering.
  • Powder metallurgy of Titanium alloys.