Development of Chemical Polishing Techniques for Sapphire.
Abstract
The objective of this research program was to improve the surface finish of rough ground sapphire substrates by optimizing the pretreatment, the chemical polishing agent, and the polishing cycle. The optimum conditions for chemically polishing sapphire were found to be: preheating of the substrate in air to 1500-1550C for four (4) hours, phosphoric acid as the chemical polishing agent, polishing at 360-400C for ten (10) minutes, and polishing under autoclave conditions. This process has application to transparent armor fabrication. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1974
- Accession Number
- AD0787291
Entities
People
- Michael Rossetti
Organizations
- Arthur D. Little