Improved Gallium Arsenide Light Emitting Diodes.
Abstract
The objective of the contract was to investigate Liquid Phase Epitaxial Process modifications which could lead to the high yield fabrication of high power domed LED's with high quantum efficiencies. The process modifications investigated included (1) growth in a slider boat, (2) growth of an additional p + layer and (3) growth of a p + GaAlAs epitaxial layer. The materials from the different growth methods were evaluated using a flat chip emitter and dome emitters were fabricated from the material which appeared most promising in the test procedure. The highest quantum efficiency devices were fabricated from material which did not have second layers grown on and which had p-layers which were greater than 0.002 inches thick. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1974
- Accession Number
- AD0787467
Entities
People
- Edward Mehal