Annealing of Sputtered Beta Silicon Carbide,
Abstract
Using an RF sputtering and etching module silicon carbide was deposited upon the surface of (100) and (111) silicon, (111) (110) (100) tungsten, and (0001) alpha SiC. Almost all deposits were amorphous initially but after thermal annealing, the thin films on the (100) silicon and on (0001) alpha became single crystal layers. Silicodes of tungsten were formed on the tungsten substrates after annealing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1974
- Accession Number
- AD0787646
Entities
People
- Charles E. Ryan
- Irvin Berman
- Robert C. Marshall
Organizations
- Air Force Cambridge Research Laboratories