Evaluation of a Low Energy Ion Implantation System.
Abstract
A machine which was originally designed as a sputtering apparatus and redesigned for use as an ion implantation system, was modified, and used to implant N(+) into p-type silicon at low energy (24 keV). Electrical characteristics of the resulting implanted layer were determined by Hall effect measurements using the van der Pauw technique. A second implantation of N(+) into p-type silicon was done at higher energy (145 keV) using the system at the Aerospace Research Laboratories. The electrical characteristics of the resulting implanted layer, determined by conventional Hall effect measurements, were found to be comparable to those of the low energy implant. In addition, the possibility of using the low energy machine to implant boron and phosphorus was investigated. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1974
- Accession Number
- AD0787699
Entities
People
- Donald D. Talada
Organizations
- Air Force Institute of Technology