Photoluminescence from Ion Implanted Silicon,

Abstract

Photoluminescence studies have added new information on the nature of radiative defects resulting from the implantation of boron, phosphorus, nitrogen, carbon and oxygen ions into silicon. The influence of the species of the implanted ion, the substrate, and annealing character of the radiative centers provide substantiating evidence for the recent identification of peaks C (0.790 eV) and G (0.970 eV) with radiative recombination at a carbon modified A-center and carbon interstitialcy defect, respectively. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1974
Accession Number
AD0787729

Entities

People

  • Conilee Gay Kirkpatrick

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Elements
  • Group 15 Elements
  • Identification
  • Implantation
  • Nitrogen
  • Nonmetals
  • Personality
  • Phosphorus
  • Photoluminescence
  • Substrates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.