HOT-ELECTRON MILLIMETER DEVICES.
Abstract
Hot-carrier effects in semiconductors were applied to the development of microwave devices for operation in the 70-90-GHz range. The program included an investigation of hot-carrier devices, and a study of phonons created in semiconductors by high electric fields. A microwave hot-carrier detector, mixer, modulator and harmonic generator were developed. The hot-carrier detector exhibits a linear detection characteristics for input powers up to 10 mW. Curves of detector sensitivity vs input power are given. The InSb performance characteristics of InSb hot-carrier mixers operated at liquid-nitrogen temperature and Ge and GaAs mixers operated at room temperature are described. Mixer performance is characterized in terms of i.f. resistance, conversion loss, noise-temperature ratio and the sensitivity of an experimental 70-GHz receiver using the mixer as a first stage. The hot-carrier modulator developed is capable of amplitude modulating a 70-90-GHz carrier with a modulation bandwidth of 5 GHz. Modulation indices at 4 MHz were usually above 60 per cent; at 6 GHz between 10 and 20%. Insertion loss was typically less than 6 dB. Third-harmonic generators driven with a pulsed 70-GHz signal was obtained with conversion losses as low as 38 dB. Several harmonic generators withstood peak inputs of 1.6 kW. Attempts were made to observe effects due to phonons in the 100-GHz range generated by heated carriers in germanium at liquid-helium temperatures. The observed effects were more likely due to carrier diffusion and heat pulses than to phonons in the desired range.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1966
- Accession Number
- AD0800413
Entities
People
- D. Fleri
- F. Drago
- L Cohen
- R. I. Harrison
- W. Hauer