INVESTIGATION OF THE GUNN EFFECT IN GALLIUM ARSENIDE.
Abstract
The Gunn effect is a recently (1963) observed phenomenon in the electrical properties of certain compound semiconductors. It is characterized by a sudden onset of oscillations in current through the material when a critical value of electric field is exceeded. The oscillations are not greatly affected by external circuit conditions, are at microwave frequencies, and occur as a bulk property at room temperature in gallium arsenide and certain other materials with the proper conduction band structure. The intervalley transfer of electrons in the conduction band from a lower energy high mobility sub-band, to a higher energy low mobility sub-band with the application of an increasing electric field gives rise to a negative differential resistance in the material. It is this mechanism which is accepted as the cause of the instabilities. A brief theoretical explanation is given. The preparation of samples of gallium arsenide is described and discussed. Sample mounting is described, and the results of various tests reported. The value of the effect lies in the ability to directly convert pulse of DC power into microwave power at usable levels and at reasonable efficiencies. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0800479
Entities
People
- Alois Allen Slepicka
Organizations
- Naval Postgraduate School