FEASIBILITY STUDY OF METAL BASE TRANSISTORS.
Abstract
The purpose of the work carried on under Phase 2 of this contract was to investigate materials and techniques for the controlled fabrication of semiconductor-metal-semiconductor layered structures and their structural and electrical properties with a view toward application for microwave metal base transistors. Vital areas of investigation were (1) evaluation of source materials, (2) prediction of layer thickness, (3) resistance of the metal layer to thermal degradation, (4) structural relationships between metal layer and silicon substrate, (5) measurement of attenuation length of carriers in the metal, and (6) influence of collector back-scattering. These studies were carried out by (1) chemical and X-ray investigation of the source material reactions in the entraining ambient, (2) investigation of the time dependence of the deposition of the metal layers, (3) change in the attenuation of microwaves by the metal layer caused by its thermal degradation, (4) electron diffraction studies of the deposited metal layers, and (5) photoresponse measurements in diodes fabricated by the deposition of the metal on silicon. The metal layers were limited to molybdenum and molybdenum silicides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1966
- Accession Number
- AD0801367
Entities
People
- James J. Casey
- Joseph Lindmayer
- P. Skadron
Organizations
- Sprague Electric