300 C SEMICONDUCTOR FOR POWER DEVICES.
Abstract
The purpose of this study is to design and construct a 50-ampere rectifier capable of operating at an ambient temperature of 300 C. The rectifier must be capable of withstanding a peak inverse voltage of 150 volts. Gallium arsenide was selected as the currently most promising material for construction of a 50-ampere, 150-volt PIV, 300 C operating rectifier. N+-N-P+ structures were grown epitaxially, and 50-mil-diameter mesa diodes were prepared. As a result of care in handling and dopant control, several diodes with up to 350-volt reverse breakdown were observed. It was shown that surface treatment plays a major role in bringing out and stabilizing the junction properties. A system of glassing in junctions was worked out using a combination of a vapor-deposited glass and a commercially available glass having a suitable thermal expansion coefficient. Work on a low-resistance, high-temperature contract was started, and a suitable package was designed and ordered. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1966
- Accession Number
- AD0801569
Entities
People
- L. A. Murray
- R. E. Enstrom