INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.
Abstract
The program objective is to deposit germanium islands suitable for fabricating high frequency germanium transistors, while maintaining the isolation characteristics of the semi-insulating gallium arsenide. A theoretical description of the mechanism by which chromium doping achieves semi-insulating GaAs, a summary of crystal growth and slice processing techniques, and studies related to the thermal stability of the resulting GaAs is presented. Pertinent physical and electrical properties of the Ge-GaAs system have been compiled. A worst-case calculation shows that the effect of Ge diffusing into GaAs should place little or no restriction upon possible integrated circuit structures. Various process parameters of epitaxial growth by germanium tetrachloride reduction and germanium hydride pyrolysis which affect epitaxial layer quality have been investigated. Those studied during this quarter's work include: Substrate orientation. Substrate crystalline perfection and surface cleanliness. Methods of in situ vapor etching GaAs. Deposition rate and temperature. Halide and hydride concentration. Methods of minimizing impurity transport.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1966
- Accession Number
- AD0801736
Entities
People
- E. Clayton Teague
- Stacy B. Watelski
Organizations
- Texas Instruments