FAILURE MECHANISMS IN MOS TRANSISTORS.

Abstract

The main objective of the study is to determine the basic failure mechanisms characteristic of silicon isolated-gate field-effect transistors (IGFET), identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished device. The device selected for Unit Group 1 study is designated MM2103, a p-channel enhancement type IGFET. The instability of the device under the influence of high gate potential which was reported on last month has been observed on similar lab-processed devices. The cause of this instability is under investigation by the R and D group. Of the 10 sample devices undergoing temperature storage, 2 have exceeded the specification limit of 20 percent allowed change from the initial value on the IDSS sub 1 parameter. Step-stress testing has begun, but results are not available. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1966
Accession Number
AD0801878

Entities

People

  • Harry Forehand
  • Lowell Clark

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Instability
  • Reliability
  • Semiconductor Devices
  • Specifications
  • Transistors

Fields of Study

  • Engineering

Readers

  • Aerospace Test and Evaluation
  • Semiconductor Device Technology