APPLICATION OF SEMICONDUCTOR DEVICES TO HIGH POWER DUPLEXERS.
Abstract
A high-power duplexer was constructed in C-band utilizing high-voltage PIN diodes as switching elements. The diodes are arranged to create a 180 degree phase shifter which switches the RF signal from one port of a balanced hybrid circuit to another. Sections of the report are devoted to a theoretical analysis of the phase shift duplexer, to a diode power handling study, and to the experimental work on single-section phase shifters and the 180 degree phase shifter. A two megawatt capability was achieved with a transmit loss of about 1 dB, a receive loss of 1.5 dB and a receiver isolation of 25 dB. The duplexer recovery time is less than one microsecond. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1966
- Accession Number
- AD0802454
Entities
People
- Paul Basken
Organizations
- M/A-COM Technology Solutions