EXCESS NOISE IN SEMICONDUCTORS
Abstract
Optical emission fluctuations in luminescent p-n junctions are correlated with the forward current noise of the junction. When appreciable carrier recombination in the space charge region exists, characteristic time constants associated with recombination transitions are observed in the noise spectra. In other diodes, both the forward current noise and the optical emission noise exhibit a l/f spectra. It is found that diodes in which the forward current is carried by diffusion do not show optical emission noise beyond statistical photon fluctuations. It is possible to determine essentially all of the important junction parameters of luminescent p-n junctions through combined electrical and optical measurements. This is so because of the good agreement between simple p-n junction theory and experimental results. The parameters which can be obtained are junction area, width internal potential, saturation current, and impurity content. A preliminary study of current noise in single crystal CdTe shows that contact noise is significant and that bulk noise may be interpreted in terms of shot noise associated with crystalline inhomogeneity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1966
- Accession Number
- AD0803548
Entities
People
- James J. Brophy
Organizations
- IIT Research Institute