THE EFFECT OF ELECTRON LIFETIME ON THE ELECTROLUMINESCENCE OF DIFFUSED GAAS DIODES.

Abstract

The degradation of the intensity of recombination radiation and short-circuit current due to 2 MeV electrons was measured on diffused GaAs diodes. The intensity at a constant voltage is found to be proportional to the square root of the minority carrier lifetime in the p-type region. The results of this investigation suggest that electrons injected into the p-side are captured at the compensating donor levels before making radiative transition to either the valence band or acceptor levels. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1966
Accession Number
AD0803903

Entities

People

  • L. W. Aukerman
  • M. F. Millea

Organizations

  • The Aerospace Corporation

Tags

DTIC Thesaurus Topics

  • Circuits
  • Corpuscular Radiation
  • Degradation
  • Electroluminescence
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Energy Bands
  • Fermions
  • Intensity
  • Ionizing Radiation
  • Minority Groups
  • Nuclear Radiation
  • Radiation
  • Short Circuits
  • Square Roots
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics