EFFECT OF FILM RESISTANCE ON LOW-IMPEDANCE TUNNELING MEASUREMENTS.

Abstract

Measurements of low-impedance thin-film tunneling junctions at room temperature frequently yield inaccurate values for the tunneling resistance. In some cases the indicated resistance is negative. A theory is developed which shows that the finite resistance of the metal films can account for the observations. Results, given for the resistance of a tunneling junction as a function of temperature, show good agreement between theory and experiment. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1966
Accession Number
AD0804204

Entities

People

  • F. L. Vernon Jr.
  • R. J. Pedersen

Organizations

  • The Aerospace Corporation

Tags

DTIC Thesaurus Topics

  • Agreements
  • Films
  • Impedance
  • Measurement
  • Metal Films
  • Observation
  • Quantum Tunneling
  • Resistance
  • Thin Films
  • Tunneling

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Semiconductor Device Technology