EFFECT OF COMPOSITIONAL STRESS ON IMPURITY DOPING OF CRYSTALS.
Abstract
It was found theoretically that compositional stresses can greatly affect the course of impurity doping during crystal growth. The theoretical results were compared with experimental anomalies reported in the prior literature. Perturbations of growth conditions were found to occasionally lead to highly damped oscillations in the doping level. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1966
- Accession Number
- AD0804575
Entities
People
- William R. Wilcox
Organizations
- The Aerospace Corporation