DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR.

Abstract

This report concentrated on the study of the effects of P+ diffusion penetration on UHF performance. A comparison of the results obtained at 2 gigahertz indicated improved performance using the deeper P+ diffusion depth. The design calculations for the required photomasks were completed; a modification of the Type A coaxial package was introduced that provides an increase in the frequency of operation of the packaged transistor; and a new coaxial cavity, incorporating beryllium oxide heat sinking, was designed and resulted in improved 2-gigahertz performance over the previous cavity. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1967
Accession Number
AD0805406

Entities

People

  • H. C. Lee
  • P. L. Mcgeough

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Alkaline Earth Metals
  • Beryllium
  • Diffusion
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Elements
  • Frequency
  • Transistors

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.